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256Kb Advanced LPSRAM (32k word x 8-bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:TSOP(28)
Pkg. Code:pkg_11792
Lead Count (#):28
Pkg. Dimensions (mm):12 x 8 x 1.2
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
ECCN (US)EAR99
HTS (US)8542.32.0041
Pb (Lead) FreeYes

Product Attributes

Carrier TypeTray
Moisture Sensitivity Level (MSL)3
Country of AssemblyMALAYSIA, TAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)55
Density (Kb)256
Lead CompliantYes
Lead Count (#)28
Length (mm)12
MOQ1
Memory Capacity (kbit)256
Memory Density0.256
Organization32K x 8
Organization (bit)x 8
Organization (kword)32
Pb (Lead) FreeYes
Pkg. Dimensions (mm)12 x 8 x 1.2
Pkg. TypeTSOP(28)
Price (USD)$2.59433
RemarksSingle Chip Select (CS#)
Replacement Remarkconsolidation of part-names and/or assembly material change
Supply Voltage (V)4.5 - 5.5
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1.2
Width (mm)8

Description

The R1LP5256E is a low-voltage 256-Kbit static RAM organized as 32, 768-word by 8-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LP5256E realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. It has been packaged in 28-pin SOP and 28-pin TSOP.