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Features

  • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 45 A)
  • Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified

Description

NP90N06VLK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-263 / D2PAK
Gate LevelLogic
VDSS (Max) (V)60
ID (A)90
RDS (ON) (Max) @10V (mohm)5.3
RDS (ON) (Max) @4.5V (mohm)8.2
Pch (W)147
Ciss (Typical) (pF)4000
Qg typ (nC)63
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-3ZP6 x 6 x 2.653
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP90N06VLK-E1-AYActiveAvailableIn StockContactMP-3ZP1ku | $0.763#Embossed Tape1YesMALAYSIAJAPAN
NP90N06VLK-E2-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-3ZP3#Embossed Tape1Yes
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