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Features

  • Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
  • Super low on-state resistance NP90N055MUH, NP90N055NUH RDS(on) = 5.8 mΩ MAX. (VGS = 10 V, ID = 45 A) NP90N055PUH RDS(on) = 5.4 mΩ MAX. (VGS = 10 V, ID = 45 A)
  • High avalanche energy, High avalanche current
  • Low input capacitance Ciss = 6200 pF TYP. (VDS = 25 V)

Description

The NP90N055MUH, NP90N055NUH, NP90N055PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.

Part NumberStatusSamplesStockRoHSPackageLead Count (#)Carrier Type
NP90N055MUHObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-25K3#Tube
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