Skip to main content
Renesas Electronics Corporation - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

Features

  • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
  • Low Ciss Ciss = 6000 pF TYP.

Description

Support is limited to customers who have already adopted these products.

The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-263 / D2PAK
Gate LevelLogic
VDSS (Max) (V)40
ID (A)82
RDS (ON) (Max) @10V (mohm)3.5
RDS (ON) (Max) @4.5V (mohm)8
Pch (W)143
Ciss (Typical) (pF)6000
Qg typ (nC)100
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-25ZP10 x 9 x 4.93
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypePb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP82N04PDG-E1-AYActiveN/AIn StockContactMP-25ZP1ku | $1.1563#Embossed TapeYesMALAYSIAJAPAN
NP82N04PDG-E2-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-25ZP3#Embossed TapeYes
Support Communities

Support Communities

Get quick technical support online from Renesas Engineering Community technical staff.
Browse Articles

Knowledge Base

Browse our knowledge base for helpful articles, FAQs, and other useful resources.
Submit a Ticket

Submit a Ticket

Need to ask a technical question or share confidential information?