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Features

  • Channel temperature 175 degree rated
  • Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 22 mΩ MAX. (VGS = 5 V, ID = 17 A)
  • Low Ciss : Ciss = 2000 pF TYP.
  • Built-in gate protection diode

Description

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

Part NumberStatusSamplesStockRoHSPackageLead Count (#)Carrier Type
NP34N055SLEObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-3ZK3#Embossed Tape
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