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Features

  • Low on-state resistance RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
  • Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

Description

The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeSO8-FL 5x6 BSC
Gate LevelStandard
VDSS (Max) (V)60
ID (A)23
RDS (ON) (Max) @10V (mohm)27
Pch (W)60
Ciss (Typical) (pF)1200
Qg typ (nC)27
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
HSON5 x 5 x 1.458
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP23N06YDG-E1-AYActiveAvailableIn StockContactHSON1ku | $0.4848#Embossed Tape1YesJAPAN, MALAYSIAJAPAN
NP23N06YDG-E2-AYObsoleteN/AIn StockRoHS:EN
RoHS:JA
HSON8#Embossed Tape1Yes
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