Skip to main content
Renesas Electronics Corporation - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

Features

  • Low on-state resistance RDS(on) = 35 mΩ MAX. (VGS = 10 V, ID = 8 A)
  • Low Ciss: Ciss = 400 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Part NumberStatusSamplesStockRoHSPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
NP16N06YLL-E1-AYObsoleteAvailableIn StockContactHSON8#Embossed Tape1Yes
NP16N06YLL-E2-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
HSON8#Embossed Tape1Yes
Support Communities

Support Communities

Get quick technical support online from Renesas Engineering Community technical staff.
Browse Articles

Knowledge Base

Browse our knowledge base for helpful articles, FAQs, and other useful resources.
Submit a Ticket

Submit a Ticket

Need to ask a technical question or share confidential information?