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Features

  • Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
  • Super low on-state resistance NP100N04MDH, NP100N04NDH RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A) RDS(on)2 = 4.7 mΩ MAX. (VGS = 4.5 V, ID = 50 A) NP100N04PDH RDS(on)1 = 2.9 mΩ MAX. (VGS = 10 V, ID = 50 A) RDS(on)2 = 4.3 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
  • High avalanche energy, High avalanche current
  • Logic level drive Type
  • Low input capacitance Ciss = 8700 pF TYP. (VDS = 25 V)

Description

The NP100N04MDH, NP100N04NDH, NP100N04PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.

Part NumberStatusSamplesStockRoHSPackageLead Count (#)Carrier Type
NP100N04MDHObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-25K3#Tube
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