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Features

  • Low on-state resistance
    RDS(on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)
  • Low input capacitance
    Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)
  • High current
    ID(DC) = ±100 A
  • RoHS Compliant

Description

The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelIndustrial
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-220
Gate LevelStandard
VDSS (Max) (V)40
ID (A)100
RDS (ON) (Max) @10V (mohm)3.7
Pch (W)119
Ciss (Typical) (pF)5550
Qg typ (nC)100
Series NameN0 Series

Package Options

Pkg. TypeLead Count (#)
TO-2203
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypePb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
N0412N-S19-AYActiveAvailableIn StockRoHS:EN
RoHS:JA
TO-2201ku | $0.7823#TubeYesCHINA, KOREAJAPAN
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