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ISL70024SEH

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200V, 7.5A Enhancement Mode GaN Power Transistor

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Overview

The ISL70024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.

ISL70024SEH_ISL73024SEH Functional Diagram
ISL70024SEH_ISL73024SEH Functional Diagram
  • Very low rDS(ON) 45mΩ (typical)
  • Ultra low total gate charge 2.5nC (typical)
  • SEE hardness (see SEE report for details)
    • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg
  • Radiation acceptance (see TID report)
    • High dose rate (50-300rad(Si)/s): 100krad(Si)
    • Low dose rate (0.01rad(Si)/s) : 75krad(Si)
  • Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
    • Package area: 42mm2
  • Full military-temperature range operation
    • TA = -55°C to +125°C
    • TJ = -55°C to +150°C

Documentation

Design & Development

Software Downloads
Type Title Date
PCB Design Files
ISL70040SEHEV3Z Design Files
ZIP 589 KB
1 item

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

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Diagram of ECAD Models

Models
Type Title Date
Model - SPICE
ISL70024SEH & ISL73024SEH PSPICE Model
ZIP 7 KB
1 item

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  1. ISL70024SEH thermal management

    Hi, I got a question regarding the thermal resistance(K/W) of the GaN Power Transistor ISL70024SEH. It is stated in the datasheet that the typical thermal resistance from junction to case is 18.7 K/W and it is to my understanding that this value is for ...

    Aug 14, 2024

FAQs

  1. ISL70024SEH / ISL73024SEH Thermal Resistance Junction to Case Top

    The Theta-jc (to the package top) is 37C/W.

    Sep 18, 2024
  2. Rad Hard GaN FETs Source and Substrate Connection

    You should connect the substrate and source terminals together using a single copper land pattern. The PCB provides a lower impedance connection to augment the internal connection. Holding the source and substrate together is crucial in high-speed switching applications.

    Jul 3, 2025
  3. What is the maximum switching frequency for your GaN FETs?

    Our recommendation is 1MHz, but you also need to consider the capability of the capacitors and inductors used.

    Jul 3, 2025
View All Results from FAQs (6)