Features
- Drives Two N-Channel MOSFETs
- Adaptive Shoot-Through Protection
- 30V Operation Voltage
- 0.4Ω On-Resistance and 4A Sink Current Capability
- Supports High Switching Frequency
- Fast Output Rise Time
- Short Propagation Delays
- Three-State PWM Input for Power Stage Shutdown
- Internal Bootstrap Schottky Diode
- QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves PCB efficiency and has a thinner profile
- Pb-Free Plus Anneal Available (RoHS Compliant)
Description
Support is limited to customers who have already adopted these products.
The ISL6207 is a high frequency, dual MOSFET driver, optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology in mobile computing applications. This driver, combined with an Intersil Multi-Phase Buck PWM controller, such as ISL6223, ISL6215, and ISL6216, forms a complete single-stage core-voltage regulator solution for advanced mobile microprocessors. The ISL6207 features 4A typical sink current for the lower gate driver. The 4A typical sink current is capable of holding the lower MOSFET gate during the Phase node rising edge to prevent the shoot-through power loss caused by the high dv/dt of the Phase node. The operation voltage matches the 30V breakdown voltage of the MOSFETs commonly used in mobile computer power supplies. The ISL6207 also features a three-state PWM input that, working together with most of Intersil multiphase PWM controllers, will prevent a negative transient on the output voltage when the output is being shut down. This feature eliminates the Schottky diode, that is usually seen in a microprocessor power system for protecting the microprocessor, from reversed-output-voltage damage. The ISL6207 has the capacity to efficiently switch power MOSFETs at frequencies up to 2MHz. Each driver is capable of driving a 3000pF load with a 15ns propagation delay and less than a 10ns transition time. This product implements bootstrapping on the upper gate with an internal bootstrap Schottky diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.
Applications
- Core Voltage Supplies for Intel and AMD® Mobile Microprocessors
- High Frequency Low Profile DC-DC Converters
- High Current Low Output Voltage DC-DC Converters
- High Input Voltage DC-DC Converters Related Literature
- Technical Brief TB363 "Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)"
- Technical Brief TB389 "PCB Land Pattern Design and Surface Mount Guidelines for QFN Packages"
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL6207CBZ | Obsolete | N/A | Out of Stock | SOICN | 8# | Tube | 1 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C | |
| ISL6207CBZ-T | Obsolete | N/A | Out of Stock | SOIC | 8# | Reel | 1.3mm | No | 0 to +70°C |
Filters
Applied Filters
- Product Change NoticePDF 77 KB PCN13026 Apr 01, 2013
- Product Change NoticePDF 108 KB PCN12068 Aug 21, 2012
- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 576 KB an1116 Jan 05, 2004AI-generated Summary: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
- DocumentPDF 264 KB tb447 Jan 19, 2004
Recommended Documents (1)
Datasheets (1)
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- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 576 KB an1116 Jan 05, 2004AI-generated Summary: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
Application Notes & White Papers (3)
- Product Change NoticePDF 77 KB PCN13026 Apr 01, 2013
- Product Change NoticePDF 108 KB PCN12068 Aug 21, 2012
Product Notices (PCN, EOL, etc) (3)
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- DocumentPDF 264 KB tb447 Jan 19, 2004
Other (2)
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