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Radiation Hardened Complementary Switch FET Driver

Package Information

CAD Model:View CAD Model
Pkg. Type:DIE
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
Pb (Lead) FreeNo
ECCN (US)EAR99
HTS (US)8542.39.0090
RoHS (IS0-1715AEH-Q)EnglishJapanese

Product Attributes

Pkg. TypeDIE
DLA SMD5962F0052103V9A
Pb (Lead) FreeNo
MOQ100
Temp. Range (°C)-55 to +125°C
CAGE code34371
DSEE (MeV·cm2/mg)90
Die Sale Availability?Yes
Driver TypeLow Side
Drivers (#)2
FET TypeMOSFET
Fall Time50
FlowRH Hermetic
Input VCC (Max) (V)18
Input VCC (Min) (V)10
Lead CompliantNo
Low Side Fall Time (max) (ns)50
Low Side Rise Time (max) (ns)50
Output TypeComplementary
PROTO Availability?Yes
Peak Output Current IPK (A)3
Peak Output Sink Current (A)3
Peak Output Source Current (A)3
Qualification LevelClass V
RatingSpace
Rise Time (Max)50
SMD URL5962-00521
TID HDR (krad(Si))300
TID LDR (krad(Si))50
Tape & ReelNo

Description

The radiation hardened IS-1715ARH and IS-1715AEH are high-speed, high current, complementary power FET drivers designed for use in synchronous rectification circuits. Soft switching transitions for the two output waveforms can be managed by setting the independently programmable delays. Alternatively, the delay pins can be configured for zero-voltage sensing to allow for precise switching control. The IS-1715ARH and IS-1715AEH have a single input, which is PWM and TTL compatible, and can run at frequencies up to 1MHz. The AUX output switches immediately at the rising edge of the INPUT, but waits for the T2 delay before responding to the falling edge. A logic low on the enable pin (ENBL) places both outputs into an active-low mode, and an Undervoltage Lockout (UVLO) function is set at 9V (maximum). These devices are constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) process and are immune to Single Event Latch-Up (SEL). They have been specifically designed to provide highly reliable performance in harsh radiation environments.