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HS-303BRH

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Radiation Hardened CMOS Dual SPDT Analog Switch

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Overview

The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303RH, but offer improved 300kRAD(Si) total dose capability. These switches offer low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant over the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303ARH and HS-303AEH should be operated with nominal ±15V supplies, while the HS-303BRH and HS-303BEH should be operated with nominal ±12V supplies.

HS-303xxH Functional Diagram
HS-303xxH Functional Diagram
  • Electrically screened to DLA SMD# 5962-95813
  • QML, per MIL-PRF-38535
  • Radiation performance
    • Total dose: 3x105rad(Si)
    • SEE: For LET = 60MeV•cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)
  • No latch-up, dielectrically isolated device islands
  • Pinout and functionally compatible with Renesas HS-303RH and HI-303 series analog switches
  • Analog signal range equal to the supply voltage range
  • Low leakage: 100nA (max, post-rad)
  • Low rON: 70Ω (max, post-rad)
  • Low standby supply current: +150μA/-100μA (max, post-rad)

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Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

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FAQs

  1. HS-303BEH / HS-303BRH Minimum Supply Voltages

    These parts are targeted for applications that use +12V supplies. All ATE testing and the data sheet limits are done and guaranteed at +12V.     These are built with a RSG (Rad-hard Silicon Gate) DI, process and cannot be assured of even functioning at +5V over temperature and radiation.  They ...

    Jul 24, 2024
  2. HS-303A versus HS-303B

    Both parts are built using the same die. Spec parameters in the 5962-95813 Standard Microcircuit Drawing (SMD) for the HS-303A are tested with supplies of +/-15V while the spec parameters for the HS-303B are tested with supplies of +/-12V. We created the HS-303B to ...

    Mar 18, 2025