Package Information
| Pitch (mm) | 1.27 |
| Lead Count (#) | 8 |
| Pkg. Dimensions (mm) | 4.93 x 3.94 x 1.47 |
| Pkg. Code | MAB |
| Pkg. Type | SOICN |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | EAR99 |
| HTS (US) | 8542390001 |
| RoHS (HIP2211FBZ-T) | Download |
Product Attributes
| Lead Count (#) | 8 |
| Carrier Type | Reel |
| Moisture Sensitivity Level (MSL) | 1 |
| Pkg. Dimensions (mm) | 4.9 x 3.9 x 1.47 |
| Pitch (mm) | 1.3 |
| Pb (Lead) Free | Yes |
| Pb Free Category | Nickel/Palladium/Gold-Silver - e4 |
| Temp. Range | -40 to +125°C |
| Country of Assembly | Philippines |
| Country of Wafer Fabrication | Taiwan |
| Price (USD) | 1ku | 0.92298 |
| Bootstrap Supply Voltage (Max) (V) | 115 |
| Charge Pump | No |
| Fall Time | 20 |
| Input Logic Level | 3.3V/TTL |
| Length (mm) | 4.9 |
| Longevity | 0000 Jul |
| MOQ | 2500 |
| Parametric Category | Half-Bridge FET Drivers |
| Peak Pull-down Current (A) | 4 |
| Peak Pull-up Current (A) | 3 |
| Pkg. Type | SOICN |
| Qualification Level | Standard |
| Rise Time (μs) | .020 |
| Simulation Model Available | iSim |
| Thickness (mm) | 1.47 |
| Turn-Off Prop Delay (ns) | 15 |
| Turn-On Prop Delay (ns) | 15 |
| VBIAS (Max) (V) | 18 |
| Width (mm) | 3.9 |
Description
The HIP2211 is a 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver. The HIP2211 features standard HI/LI inputs and is pin-compatible with popular Renesas bridge drivers such as the HIP2101 and ISL2111. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.
This driver features a strong 3A source, 4A sink driver with very fast 15ns typical propagation delay and 2ns typical delay matching, making it optimal for high-frequency switching applications. VDD and boot UVLO protects against an undervoltage operation.
The HIP2211 is offered in 8 Ld SOIC, 8 Ld 4x4mm DFN, and 10 Ld 4x4mm TDFN packages.