Features
- 3 Micron Radiation Hardened CMOS SOS
- Total Dose 200K RAD (Si)
- SEP Effective LET No Upsets: >100 MEV-cm,2/mg
- Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
- Dose Rate Survivability: >1 x 1012 RAD (Si)/s
- Dose Rate Upset >1010 RAD (Si)/s, 20ns Pulse
- Latch-Up Free Under Any Conditions
- Military Temperature Range: -55°C to +125°C
- Significant Power Reduction Compared to LSTTL ICs
- DC Operating Voltage Range: 4.5V to 5.5V
- Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
- Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
Support is limited to customers who have already adopted these products.
The Intersil HCS157MS is a Radiation Hardened quad 2-input multiplexers which select four bits of data from two sources under the control of a common select input (S). The Enable input (E NOT) is active low. When the enable pin is high all of the outputs (1Y-4Y) are forced low regardless of all other input conditions. Moving data from two groups of registers to four common output busses is a common use of these devices. The state of the Select input determines the particular register from which the data comes. They can also be used as function generators. The HCS157MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS157MS is supplied in a 16 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | DLA SMD | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) | CAGE code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HCS157DMSR | Obsolete | N/A | Out of Stock | SBDIP | 16# | Tube | Not Applicable | 2.5mm | 20.3 x 7.5 x 2.41 | 5962-95805 | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HCS157KMSR | Obsolete | N/A | Out of Stock | CFP | 16# | Tray | Not Applicable | 1.3mm | 10.4 x 6.9 x 0.00 | 5962-95805 | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
- Application NotePDF 338 KB an9867 Nov 10, 1999AI-generated Summary: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
Recommended Documents (1)
Datasheets (1)
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- Application NotePDF 338 KB an9867 Nov 10, 1999AI-generated Summary: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
Application Notes & White Papers (2)
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