Features
- Very Fast Acquisition 500ns (0.1%) 650ns (0.01%)
- Low Droop Rate 0.01µV/µs
- Very Low Offset 0.2mV
- High Slew Rate 90V/µs
- Wide Supply Range ±10V to ±20V
- Internal Hold Capacitor
- Fully Differential Input
- TTL/CMOS Compatible
HA-5330 Functional Diagram
Description
The HA-5330 is a very fast sample and hold amplifier designed primarily for use with High-Speed A/D converters. It utilizes the Intersil Dielectric Isolation process to achieve a 650ns acquisition time to 12-bit accuracy and a droop rate of 0. 01µV/µs. The circuit consists of an input transconductance amplifier capable of producing large amounts of charging current, a low leakage analog switch, and an integrating output stage which includes a 90pF hold capacitor. The analog switch operates into a virtual ground, so charge injection on the hold capacitor is constant and independent of VIN. Charge injection is held to a low value by compensation circuits and, if necessary, the resulting 0. 5mV hold step error can be adjusted to zero via the Offset Adjust terminals. Compensation is also used to minimize leakage currents which cause voltage droop in the Hold mode. The HA-5330 will operate at reduced supply voltages (to ±10V) with a reduced signal range. The MIL-STD-883 data sheet for this device is available on request.
Applications
- Precision Data Acquisition Systems D/A Converter Deglitching Auto-Zero Circuits Peak Detectors
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 5962-87677012A | Obsolete | N/A | Out of Stock | Contact | CLCC | 20# | Tube | Not Applicable | 1.3mm | 8.9 x 8.9 x 0.00 | No | Hot Solder Dip | 56 | -55 to +125°C |
| HA1-5330-5 | Obsolete | N/A | In Stock | RoHS:EN RoHS:JA | CERDIP | 14# | Tube | 2.5mm | 19.3 x 7.3 x 0.00 | No | 100 | 0 to +70°C |
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- Product Change NoticePDF 260 KB PCN16087 Sep 30, 2016
- End Of Life NoticePDF 226 KB PLC16037 Apr 12, 2016
- End Of Life NoticePDF 203 KB PLC15033A Jan 08, 2016
- End Of Life NoticePDF 200 KB PLC15033 Jun 11, 2015
- Product Change NoticePDF 174 KB PCN14017 Apr 21, 2014
- Product Change NoticePDF 143 KB PCN11044 Apr 19, 2011
- End Of Life NoticePDF 153 KB PLC11027 Apr 13, 2011
- Product Change NoticePDF 138 KB PCN11042 Apr 07, 2011
- End Of Life NoticePDF 692 KB PLC10100 Nov 04, 2010
- Application NotePDF 357 KB an1694 Jan 19, 2004AI-generated Summary: The document outlines the four fundamental internal blocks of an operational amplifier and presents a simple 2:1 stage circuit diagram. It includes important legal notices from Renesas Electronics regarding the use, liability, and intellectual property rights of their semiconductor products. The document clarifies product quality grades, intended applications, and restrictions on use in life-critical or hazardous systems. It emphasizes compliance with applicable laws and safety responsibilities when using Renesas products. Contact information for Renesas sales offices worldwide is also provided.
- Application NotePDF 843 KB an535 Jun 05, 2002AI-generated Summary: A Data Acquisition System (DAS) requires careful design of signal conditioning, transducer selection, and signal transmission to ensure high accuracy. Signal conditioning includes multiplexing, amplification, filtering, and calibration, ideally performed near the transducer. Transducers convert physical variables to electrical signals, often voltage, with low source resistance preferred. Signal paths can be single-ended or differential; differential paths better reject common mode noise, especially for low-level signals. Shielded twisted pairs and balanced lines reduce interference. Filters, typically Butterworth low-pass, prevent aliasing and maintain signal integrity.
- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
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- Application NotePDF 357 KB an1694 Jan 19, 2004AI-generated Summary: The document outlines the four fundamental internal blocks of an operational amplifier and presents a simple 2:1 stage circuit diagram. It includes important legal notices from Renesas Electronics regarding the use, liability, and intellectual property rights of their semiconductor products. The document clarifies product quality grades, intended applications, and restrictions on use in life-critical or hazardous systems. It emphasizes compliance with applicable laws and safety responsibilities when using Renesas products. Contact information for Renesas sales offices worldwide is also provided.
- Application NotePDF 843 KB an535 Jun 05, 2002AI-generated Summary: A Data Acquisition System (DAS) requires careful design of signal conditioning, transducer selection, and signal transmission to ensure high accuracy. Signal conditioning includes multiplexing, amplification, filtering, and calibration, ideally performed near the transducer. Transducers convert physical variables to electrical signals, often voltage, with low source resistance preferred. Signal paths can be single-ended or differential; differential paths better reject common mode noise, especially for low-level signals. Shielded twisted pairs and balanced lines reduce interference. Filters, typically Butterworth low-pass, prevent aliasing and maintain signal integrity.
- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
Application Notes & White Papers (3)
- Product Change NoticePDF 260 KB PCN16087 Sep 30, 2016
- End Of Life NoticePDF 226 KB PLC16037 Apr 12, 2016
- End Of Life NoticePDF 203 KB PLC15033A Jan 08, 2016
- End Of Life NoticePDF 200 KB PLC15033 Jun 11, 2015
- Product Change NoticePDF 174 KB PCN14017 Apr 21, 2014View More (9)
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