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3.3V 256K x 18 Synchronous Flow-Through SRAM with 3.3V I/O

Package Information

Lead Count (#) 100
Pkg. Code PKG100
Pitch (mm) 0.65
Pkg. Type TQFP
Pkg. Dimensions (mm) 20.0 x 14.0 x 1.4

Environmental & Export Classifications

Pb (Lead) Free Yes
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320041

Product Attributes

Lead Count (#) 100
Pb (Lead) Free Yes
Carrier Type Reel
Moisture Sensitivity Level (MSL) 3
Price (USD) | 1ku 6.46459
Architecture Synch Burst
Bus Width (bits) 18
Core Voltage (V) 3.3
Density (Kb) 4608
I/O Voltage (V) 3.3 - 3.3
Length (mm) 20.0
MOQ 1000
Organization 256K x 18
Output Type Flowthrough
Package Area (mm²) 280.0
Pb Free Category e3 Sn
Pitch (mm) 0.65
Pkg. Dimensions (mm) 20.0 x 14.0 x 1.4
Pkg. Type TQFP
Qty. per Carrier (#) 0
Qty. per Reel (#) 1000
Reel Size (in) 13
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel Yes
Temp. Range 0 to 70°C
Thickness (mm) 1.4
Width (mm) 14.0

Description

The 71V3579 3.3V CMOS SRAM is organized as 256K x 18 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.