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Renesas Electronics Corporation

Features

  • Super low on-state resistance
    RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A)
    RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
  • Low Ciss: Ciss = 5450 pF TYP.

Description

The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
2SK3814-Z-AZObsoleteN/AOut of StockMP-3Z3#BagYes
2SK3814-Z-E1-AZObsoleteN/AIn StockMP-3Z3#Embossed Tape1Yes
2SK3814(0)-Z-E1-AZObsoleteN/AIn StockMP-3Z3#Embossed Tape1Yes
2SK3814(0)-Z-E2-AZObsoleteN/AOut of StockMP-3Z3#Embossed Tape1Yes
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