Overview
Description
The ISL73033SLHEV1Z evaluation board is used to evaluate the performance of the ISL73033SLH radiation hardened Driver-GaN power stage. The ISL73033SLH integrates a 4.5V gate driver and a 100V, 7.5mΩ enhancement-mode Gallium Nitride FET (eGaN FET) in a single 8mm x 8mm BGA package. The device simplifies the printed circuit board (PCB) layout by integrating a driver plus GaN FET in one package and is designed for boost and isolated DC/DC converter topologies. The driver operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting logic drives with a single device.
The ISL73003SLHEV1Z evaluation board is configured as a common-source open drain 100V current sense load switch with three on board 2512 sized 220mΩ resistors in parallel (73.3mΩ).
Features
- Production testing and qualification follow the standard AS6294/1
- 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver
- Wide driver bias range of 4.5V to 13.2V
- Up to 16.5V logic inputs (regardless of VDD level)
- Inverting and non-inverting inputs
- Integrated driver optimized for enhancement-mode GaN FETs
- Internal 4.5V regulated gate drive voltage
- Full military temperature range operation
- TA = -55 °C to +125 °C
- TJ = -55 °C to +150 °C
- Radiation hardness assurance (lot-by-lot)
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- SEE hardness for Driver (see the SEE test report)
- No SEB/L LETTH, VDD = 16.5V: 86MeV•cm2/mg
- No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
- SEE hardness for GaN FET (see the SEE test report)
- No SEB/L LETTH, VDS = 100V: 86MeV•cm2/mg
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ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
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