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Renesas Electronics Corporation
100V, 230A, 1.9mΩ N‑Channel REXFET‑1 Power MOSFET in TOLT Package

Package Information

CAD Model:View CAD Model
Pkg. Type:TOLT
Pkg. Code:TN0016AA
Lead Count (#):16
Pkg. Dimensions (mm):15 x 9.9 x 2.3
Pitch (mm):1.2

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ECCN (US)
HTS (US)8541.29.0095
RoHS (RBE019N10R1SZPW#KB0)EnglishJapanese

Product Attributes

Pkg. TypeTOLT
Lead Count (#)16
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
Assembly LocationCHINA
Channels (#)1
Ciss (Typical) (pF)11000
FunctionPower MOSFETs
Gate LevelStandard
ID (A)230
Id max @ 25°C (A)230
Lead CompliantNo
Length (mm)15
MOQ1300
Mounting TypeSurface Mount
Nch/PchNch
Pch (W)405
Pkg. Dimensions (mm)15 x 9.9 x 2.3
Qg typ (nC)140
Qualification LevelIndustrial
RDS (ON) (Max) @10V (mohm)1.9
RDS (ON) (Typical) @ 10V / 8V (mohm)1.63
Series NameREXFET-1
Simulation Model AvailableYes
Standard Pkg. TypeTOLT
Tape & ReelYes
Thickness (mm)2.3
VDSS (Max) (V)100
VGSS (V)20
Vgs (off) (Max) (V)4
Wafer Fab LocationJAPAN
Width (mm)9.9

Description

The RBE019N10R1SZPW n-channel power MOSFET features REXFET‑1 split‑gate technology and is available in a TOLT package. The TOLT package uses gullwing‑type leads to provide strong resistance to thermal stress and incorporates a top‑side cooling structure that enhances system‑level heat dissipation.

Renesas’ REXFET‑1 split‑gate technology is well‑suited for applications requiring low RDS(on) and high switching performance, making it ideal for high‑power and high‑frequency applications.