Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | TOLT |
| Pkg. Code: | |
| Lead Count (#): | 16 |
| Pkg. Dimensions (mm): | 9.90 x 15.00 x 2.30 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) | 8541.29.0095 |
| RoHS (RBA013N08R1SBPW#KB0) | EnglishJapanese |
Product Attributes
| Pkg. Type | TOLT |
| Lead Count (#) | 16 |
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Assembly Location | CHINA |
| Channels (#) | 1 |
| Ciss (Typical) (pF) | 14000 |
| Function | Power MOSFETs |
| Gate Level | Standard |
| ID (A) | 340 |
| Id max @ 25°C (A) | 340 |
| Lead Compliant | No |
| Length (mm) | 15 |
| MOQ | 1300 |
| Mounting Type | Surface Mount |
| Nch/Pch | Nch |
| Pch (W) | 468 |
| Pkg. Dimensions (mm) | 9.90 x 15.00 x 2.30 |
| Qg typ (nC) | 185 |
| Qualification Level | Automotive |
| RDS (ON) (Max) @10V (mohm) | 1.3 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 1.16 |
| Series Name | REXFET-1 |
| Simulation Model Available | Yes |
| Standard Pkg. Type | TOLT |
| Tape & Reel | Yes |
| Thickness (mm) | 2.3 |
| VDSS (Max) (V) | 80 |
| VGSS (V) | 20 |
| Vgs (off) (Max) (V) | 4 |
| Wafer Fab Location | JAPAN |
| Width (mm) | 9.9 |
Resources for RBA013N08R1SBPW
Description
The RBA013N08R1SBPW n-channel power MOSFET features REXFET‑1 split‑gate technology and is available in a TOLT package. The TOLT package uses gullwing‑type leads to provide strong resistance to thermal stress and incorporates a top‑side cooling structure that enhances system‑level heat dissipation.
Renesas’ REXFET‑1 split‑gate technology is well‑suited for applications requiring low RDS(on) and high switching performance, making it ideal for high‑power and high‑frequency applications.