The recent demands for highly secure and reliable user systems are driving increased demand for highly reliable SRAM, which is used to store important information such as system programs and financial transaction data. Renesas' Low Power SRAM (LPSRAM) products have a proven track record for application in middle- to small-scale memory systems and are designed to provide enhanced reliability and longer backup battery life for applications such as factory automation (FA), industrial equipment, and the smart grids.

Renesas' Advanced Low Power SRAMs, the core products series, have acquired a solid reputation for achieving both high-performance and high-reliability without any technical trade-off. These advanced LPSRAM devices feature exclusive technology in their memory cells that achieves soft error resistance over 500 times that of conventional Full CMOS memory cells. This makes them desirable for use in fields requiring high reliability.

Features

  • High Reliability
    • Excellent soft error immunity without embedded ECC
    • Latch-up free memory cell structure
  • Stable Supply and Long-Term Support
    • Covered by the Product Longevity Program (PLP)
  • Wide Line-Up to Support all Applications
    • Memory density: Lineup from 256Kb to 64Mb
    • Supply voltage: 3V/5V (continued support of 5V parts)
    • Package: Varied package lineup

Applications

  • Industrial
    • Factory automation, computerized numerical control, programmable logic controllers, vending machines, ticket gates, automated teller machines
  • Communication
    • Routers, switches, basestations, etc.
  • Social Infrastructure
    • Elevator systems, transportation systems, railway systems, traffic signal systems, smart grid devices, etc.
  • Office Automation
    • Multi-function printers, etc.
  • Consumer
    • Gaming machines, musical instruments, calculators, etc.
  • Car Accessories (Non-Driveline Devices)
    • Electronic throttle control (ETC), digital tachometers, etc.
  • Medical/Healthcare
    • Medical electronic devices

Memory & Logic

Product Selection Table

    Processing table
    Part Number
    PLP
    Memory Density
    Organization
    Access Time (ns)
    Supply Voltage (V)
    Temp. Range
    R1LP0108E
    1Mb Advanced LPSRAM (128k word x 8bit)    		 2031 Mar, 2032 Dec 1M 128K x 8 55 4.5 - 5.5 -40 to 85°C
    R1LP0408D
    4Mb Advanced LPSRAM (512-kword × 8-bit)    		 2031 Mar, 2032 Dec 4M 512K x 8 55 4.5 - 5.5 -40 to 85°C
    R1LP5256E
    256Kb Advanced LPSRAM (32k word x 8bit)    		 2032 Dec 256k 32K x 8 55 4.5 - 5.5 -40 to 85°C
    R1LV0108E
    1Mb Advanced LPSRAM (128k word x 8bit)    		 2031 Mar, 2032 Dec 1M 128K x 8 55 2.7 - 3.6 -40 to 85°C
    R1LV0208BSA
    2Mb Advanced LPSRAM (256k word x 8bit)    		 2032 Dec 2M 256K x 8 55 2.7 - 3.6 -40 to 85°C
    R1LV0216BSB
    2Mb Advanced LPSRAM (128k word x 16bit)    		 2032 Dec 2M 128K x 16 55 2.7 - 3.6 -40 to 85°C
    R1LV5256E
    256Kb Advanced LPSRAM (32k word x 8bit)    		 2032 Dec 256k 32K x 8 55 2.7 - 3.6 -40 to 85°C
    RMLV0408E
    4Mb Advanced LPSRAM (512-kword × 8-bit)    		 2031 Mar, 2032 Dec 4M 512K x 8 45 2.7 - 3.6 -40 to 85°C
    RMLV0414E
    4Mb Advanced LPSRAM (256-kword × 16-bit)    		 2032 Dec 4M 256K x 16 45 2.7 - 3.6 -40 to 85°C
    RMLV0416E
    4Mb Advanced LPSRAM (256-kword × 16-bit)    		 2032 Dec 4M 256K x 16 45 2.7 - 3.6 -40 to 85°C
    RMLV0808BGSB
    8Mb Advanced LPSRAM (1024k word × 8bit)    		 2032 Dec 8M 1M x 8 45 2.4 - 3.6 -40 to 85°C
    RMLV0816BGBG
    8Mb Advanced LPSRAM (512k word × 16bit)    		 2032 Dec 8M 512K x 16 45 2.4 - 3.6 -40 to 85°C
    RMLV0816BGSA
    8Mb Advanced LPSRAM (512k word × 16bit / 1024k word x 8bit)    		 2032 Dec 8M 512K x 16 45 2.4 - 3.6 -40 to 85°C
    RMLV0816BGSB
    8Mb Advanced LPSRAM (512k word × 16bit)    		 2032 Dec 8M 512K x 16 45 2.4 - 3.6 -40 to 85°C
    RMLV0816BGSD
    8Mb Advanced LPSRAM (512k word × 16bit / 1024k word x 8bit)    		 2032 Dec 8M 512K x 16 45 2.4 - 3.6 -40 to 85°C
    RMLV1616A
    16Mb Advanced LPSRAM (1M word × 16bit / 2M word x 8bit)    		 2032 Dec 16M 1M x 16 55 2.7 - 3.6 -40 to 85°C
    RMLV1616A-U
    16Mbit LPSRAM (1M word × 16bit / 2M word x 8bit)    		 TBD 16M 1M x 16 55 2.7 - 3.6 -40 to 85°C
    RMLV3216A
    32Mb Advanced LPSRAM (2M word × 16bit / 4M word x 8bit)    		 2032 Dec 32M 2M x 16 55 2.7 - 3.6 -40 to 85°C
    RMWV3216A
    32Mb Advanced LPSRAM (2M word × 16bit)    		 2032 Dec 32M 2M x 16 55 2.7 - 3.6 -40 to 85°C
    RMWV6416A
    64Mb Advanced LPSRAM (4M word × 16bit / 8M word x 8bit)    		 2032 Dec 64M 4M x 16 55 2.7 - 3.6 -40 to 85°C
    Parametric Table tips

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    Documentation

    Title Type Date
    One-Renesas Memory Solutions Brochure
    PDF4.49 MB
    Brochure
    Low Power SRAMs Brochure
    PDF3.23 MB
    Brochure
    Industrial Automation Brochure
    PDF7.93 MB日本語, 简体中文
    Brochure
    SRAM Part Number Guide
    PDF178 KB日本語
    Guide
    SRAM Soldering and Mounting Conditions
    PDF1.27 MB日本語
    Guide
    EOL plan of R1LV1616H series with development of alternative products (Revised)
    PDF2.00 MB日本語
    Guide
    Standard SRAM Products Outline
    PDF1.38 MB日本語
    Overview