The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized highspeed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuitdesigning technology. It is most appropriate for the application which requires High-Speed, high densitymemory and wide bit width configuration, such as cache and buffer memory in system. Especially, L-Versionand S-Version are low power consumption and it is the best for the battery backup system. Thepackage prepares 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surfacemounting.
Features
- Single 3.3V supply: 3.3V ± 0.3V
- Access time: 10ns / 12ns (max)
- Completely static memory
- No clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible
- All inputs and outputs
- Operating current: 145mA / 130mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current: 5mA (max) : 0.8mA (max) (L-version) : 0.5mA (max) (S-version)
- Data retention current: 0.4mA (max) (L-version) :0.2mA (max) (S-version)
- Data retention voltage: 2.0V (min) (L-version , S-version)
- Center VCCand VSStype pin out