This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .


  • Logic level operation (4 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Power supply voltage applies 12 V and 24 V.
  • AEC-Q101 Compliant


Document title Document type
Date Date
PDF 89 KB 日本語 Datasheet
PDF 3.23 MB 日本語 Application Note
PDF 648 KB 日本語 Application Note
PDF 6.61 MB Brochure
PDF 2.24 MB Brochure
PDF 1.32 MB Brochure
PDF 4.86 MB 日本語 Product Change Notice
PDF 3.74 MB 日本語 Product Change Notice
PDF 1.46 MB 日本語 Product Change Notice
9 items

Design & Development