This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .
|Document title||Document type
|PDF 89 KB 日本語||Datasheet|
|PDF 3.23 MB 日本語||Application Note|
|PDF 648 KB 日本語||Application Note|
|PDF 6.61 MB||Brochure|
|PDF 2.24 MB||Brochure|
|PDF 1.32 MB||Brochure|
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction)PDF 4.86 MB 日本語
|Product Change Notice|
|PDF 3.74 MB 日本語||Product Change Notice|
|PDF 1.46 MB 日本語||Product Change Notice|
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