Overview

Description

The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
  • High current rating: ID(DC) = ∓100 A
  • Built-in gate protection diode

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 1.32 MB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Product Reliability Report PDF 224 KB
Brochure PDF 2.24 MB
5 items

Design & Development

Models

Models

Type Title Date
Model - SPICE ZIP 1 KB
1 item