特長
- Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
- High current rating: ID(DC) = ∓100 A
説明
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
パラメータ
| 属性 | 値 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Pch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-263 / D2PAK |
| Simulation Model Available | Yes |
| VDSS (Max) (V) | -60 |
| ID (A) | -100 |
| RDS (ON) (Max) @10V or 8V (mohm) | 6 |
| RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm) | 7.8 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 4.4 |
| Pch (W) | 200 |
| Vgs (off) (Max) (V) | -2.5 |
| VGSS (V) | 20 |
| Ciss (Typical) (pF) | 15000 |
| Qg typ (nC) | 300 |
| Mounting Type | Surface Mount |
パッケージオプション
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-25ZP | 10 x 9 x 4.9 | 3 |
適用されたフィルター
読込中