特長
- Low on-state resistance:
RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A)
RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) - Low Ciss: Ciss = 720 pF TYP.
- Built-in gate protection diode
- TO-251/TO-252 package
説明
The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
適用されたフィルター
読込中