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ISL70040SEH

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Radiation Hardened Low Side GaN FET Driver

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Overview

The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4. 5V gate drive voltage (VDRV) generated using an internal regulator which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL70040SEH and ISL73040SEH inputs can withstand voltages up to 14. 7V regardless of the VDD voltage. This allows the ISL70040SEH and ISL73040SEH inputs to be connected directly to most PWM controllers. The ISL70040SEH and ISL73040SEH split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths. The ISL70040SEH and ISL73040SEH operate across the military temperature range from -55°C to +125°C and are offered in an 8 Ld hermetically sealed ceramic Surface Mount Device (SMD) package or die form.

ISL70040SEH_ISL73040SEH Functional Diagram
ISL70040SEH_ISL73040SEH Functional Diagram
  • Wide operating voltage range of 4.5V to 13.2V
  • Up to 14.7V logic inputs (regardless of VDD level)
  • Inverting and non-inverting inputs
  • Optimized to drive enhancement mode GaN FETs
  • Internal 4.5V regulated gate drive voltage
  • Independent outputs for adjustable turn-on/turn-off speeds
  • Full military temperature range operation
  • TA = -55°C to +125°C
  • TJ = -55°C to +150°C
  • Radiation hardness assurance (wafer-by-wafer)
  • High Dose Rate (HDR) (50-300rad(Si)/s): 100krad(Si) (ISL70040SEH only)
  • Low Dose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness (refer to the ISL70040SEH, ISL73040SEH SEE Report for details)
  • No SEB/L LETTH, VDD = 14.7V: 86MeV•cm2/mg
  • No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
  • Electrically screened to DLA SMD 5962-17233

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Models
Type Title Date
Model - SPICE
ISL70040SEH, ISL73040SEH and ISL71040M PSPICE Model
ZIP 77 KB
Model - iSim
ISL70040SEH, ISL73040SEH and ISL71040M Steady State iSim Model
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  1. ISL70040seh

    Can someone provide a ECCN for a ISL70040SEH Thanks Kevin

    Aug 28, 2024

FAQs

  1. What is the maximum switching frequency for your ISL70040SEH and ISL73040SEH GaN FET Drivers?

    Our recommendation is 1MHz, but you also need to consider the capability of the capacitors and inductors used.

    Jul 3, 2025
  2. How does the GaN FET low side driver prevent voltages that can damage the gate of the GaN FET?

    Question: How does the Gallium Nitride (GaN) FET low side driver prevent voltages that can damage the gate of the GaN FET?   Answer: The driver uses an internal regulator that precisely controls the gate drive voltage, even over temperature extremes and radiation.   GaN Drivers: ISL70040SEH, ISL73040SEH GaN FETS: ISL70023SEH, ISL70024SEH ...

    Jan 1, 1970