Overview
Description
The ISL70020SEH is a 40V N-channel enhancement mode GaN power transistor. This GaN FET has been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
Features
- Very low rDS(ON) 3.5mΩ (typical)
- Ultra low total gate charge 19nC (typical)
- Radiation acceptance testing
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- SEE hardness (see the SEE report for details)
- SEL/SEB LETTH (VDS = 40V, VGS = 0V): 86.4MeV•cm2/mg
- Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 516 KB | |
| Report | PDF 524 KB | |
| Technical Brief | PDF 332 KB | |
| Manual - Development Tools | PDF 1.06 MB | |
| Application Note | PDF 221 KB | |
| Report | PDF 341 KB | |
| White Paper | PDF 470 KB 日本語 | |
| White Paper | PDF 548 KB | |
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Design & Development
Software & Tools
Boards & Kits
Evaluation
ISL70040SEHEV5Z
Active
Evaluation Board for the ISL70040SEH and ISL70020SEH (40V GaN FET)
The ISL70040SEHEV5Z evaluation platform is designed to evaluate the ISL70040SEH alongside the ISL70020SEH. The ISL70040SEH is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The board operates across a supply range of 4.5V to...
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Demonstration
ISLVERSALDEMO2Z
Active
Power Management Reference Design for AMD Versal XQRVC1902
The ISLVERSALDEMO2Z demo board provides the power management for the AMD Xilinx Space Grade Versal ACAP AI Core VC1902 using Renesas' Radiation Hardened Power Management devices. The Versal ACAP system requires various supply rails, including the core, digital, analog, and DDR memory. The...
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Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
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