Renesas Electronics Corporation
Search

RBA250N10CHPF-4UA02

Active

Nch Power MOSFET 100V 250A 2.4mohm TO-263-7 / D2PAK-7 for Automotive

Order Now

Overview

The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Super low on-state resistance
    • RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 9500pF TYP. (VDS = 50 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

Documentation

Featured Documentation
Type Title Date
Datasheet
RBA250N10CHPF-4UA02 100V – 250A – N-channel Power MOS FET Application : Automotive
PDF 659 KB
Guide
Power Discrete Mount Pad
PDF 796 KB
Application Note
Power MOSFET Application Note
PDF 3.23 MB 日本語
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Brochure
Power MOSFET & IPD
PDF 2.24 MB
5 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

Explore ECAD Models
Diagram of ECAD Models

Product Options

Applied Filters:

Support

Support Communities

Support Communities

Get quick technical support online from Renesas Engineering Community technical staff.
Get Support
Browse FAQs

FAQs

Browse our knowledge base of common questions and answers.
Browse FAQs
Submit a Ticket

Submit a Ticket

Need to ask a technical question or share confidential information?
Submit Ticket