Overview

Description

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Channel temperature 175 degree rated
  • Super low on-state resistance RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A)
  • Low Ciss : Ciss = 1600 pF TYP.
  • Built-in gate protection diode

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 288 KB
Guide PDF 2.65 MB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
4 items

Design & Development

Models