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TP65H050G4YS

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650V 50mΩ SuperGaN FET in TO247-4

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Overview

The TP65H050G4YS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H050G4YS is offered in an industry-standard TO-247-4 with a Kelvin source and common source package configuration.

TP65H050G4YS Typical Diagram
TP65H050G4YS Efficiency
TP65H050G4YS Power Loss
TP65H050G4YS Typical Diagram
TP65H050G4YS Efficiency
TP65H050G4YS Power Loss
  • Gen IV technology
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging
  • Achieves increased efficiency in both hard- and soft-switched circuits
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Easy to drive with commonly-used gate driver
  • Kelvin source for improved performance
  • Pin-to-pin Drop-in with Si and SiC TO-247-4 (note: tab is source versus drain)

Documentation

Design & Development

Software Downloads

PCB Design Files
200kHz Phase Shift Full Bridge for 3.3kW Electric Vehicle On-board Charger Design Files
ZIP 699 KB
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PCB Design Files
600W DC to DC LLC Design Using GaN FETs Design Files
ZIP 207 KB
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PCB Design Files
100kHz Dual Active Bridge for 3.3kW Bi-directional Battery Charger Design Files
ZIP 751 KB
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Ultrafast Overcurrent Breaker Circuit for Prototyping Design Files
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4 items

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

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Diagram of ECAD Models

Models

Model - SPICE
TP65H050G4YS SPICE Model
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Support Communities

  1. Spice models for Transphorm GaN FETs

    I need decent spice models for some Transphorm GaN fets, particularly TP65H050G4YS (in TO-247-4  package) and TP65H070G4QS (TOLL package). Both of these packages have kelvin connections for gate drive. Package parasitics, particularly terminal inductances, are critical. I'm using Cadence PSpice, but compatible models would be useful and ...

    Jan 24, 2025