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Radiation Hardened Low Dropout Adjustable Negative Voltage Regulator

Package Information

Pkg. Type DIE

Environmental & Export Classifications

Pb (Lead) Free No
ECCN (US) 9A515.e.1
Moisture Sensitivity Level (MSL)
HTS (US)

Product Attributes

Qualification Level EM
Pb (Lead) Free No
MOQ 5
Temp. Range -55 to +125°C
CAGE code 34371
Die Sale Availability? Yes
Flow RH Hermetic
IOUT (A) 1
IOUT (Max) (mA) 1000
Input Voltage (Max) (V) -30
Input Voltage (Min) (V) -3
Models Available PSPICE
Output Options Adjustable
Output Voltage (Max) (V) -26
Output Voltage (Min) (V) -2.25
PROTO Availability? Yes
Pkg. Type DIE
Quiescent Current .006
Rating Space
Supply Voltage (max) (V) -3 - -3
Supply Voltage (min) (V) -30 - -30
TID HDR (krad(Si)) 300
TID LDR (krad(Si)) Report Available
VDO @ IOUTMAX (Typ) (V) 1
VOUT (max) (V) -2.25
VOUT (min) (V) -26

Description

Radiation Hardened Low Dropout Adjustable Negative Voltage Regulator The radiation hardened ISL72991RH is a low dropout adjustable negative regulator with an output voltage range of -2.25V to -26V. The device features a 1A output current capability, an adjustable current limit pin (ILIM), and a shutdown pin (SD) for easy on/off control. The device incorporates unique circuitry that enables precision performance across the -55 °C to +125 °C temperature range and post-irradiation. Specifications across the full temperature range include an internal reference voltage of -1.25V +40mV/- 50mV (maximum), line regulation of ±25mV (maximum), and load regulation of ±15mV (maximum). The reference voltage is the ADJ to GND voltage. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments.