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3.3V 512K x 8 Asynchronous Static RAM Center Power & GND Pinout

Package Information

Lead Count (#) 44
Pkg. Code PHG44
Pitch (mm) 0.8
Pkg. Type TSOP
Pkg. Dimensions (mm) 18.41 x 10.16 x 1.0

Environmental & Export Classifications

Pb (Lead) Free Yes
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320041

Product Attributes

Lead Count (#) 44
Pb (Lead) Free Yes
Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Country of Assembly Taiwan
Country of Wafer Fabrication Taiwan, United States
Price (USD) | 1ku 7.70456
Access Time (ns) 15
Architecture Asynchronous
Bus Width (bits) 8
Core Voltage (V) 3.3
Density (Kb) 4096
I/O Voltage (V) 3.3 - 3.3
Length (mm) 18.41
MOQ 135
Organization 512K x 8
Package Area (mm²) 187.0
Pb Free Category e3 Sn
Pitch (mm) 0.8
Pkg. Dimensions (mm) 18.41 x 10.16 x 1.0
Pkg. Type TSOP
Qty. per Carrier (#) 135
Qty. per Reel (#) 0
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel No
Temp. Range -40 to 85°C
Thickness (mm) 1.0
Width (mm) 10.16

Description

The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.