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3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

Package Information

Lead Count (#) 165
Pkg. Code BQG165
Pitch (mm) 1
Pkg. Type CABGA
Pkg. Dimensions (mm) 15.0 x 13.0 x 1.2

Environmental & Export Classifications

Pb (Lead) Free Yes
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320041

Product Attributes

Lead Count (#) 165
Pb (Lead) Free Yes
Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Country of Assembly Philippines
Country of Wafer Fabrication Taiwan, United States
Price (USD) | 1ku 10.87412
Architecture Synch Burst
Bus Width (bits) 36
Core Voltage (V) 3.3
Density (Kb) 4608
I/O Frequency (MHz) 1 - 1
I/O Voltage (V) 3.3 - 3.3
Length (mm) 15.0
MOQ 136
Organization 128K x 36
Output Type Pipelined
Package Area (mm²) 195.0
Pb Free Category e1 SnAgCu
Pitch (mm) 1.0
Pkg. Dimensions (mm) 15.0 x 13.0 x 1.2
Pkg. Type CABGA
Qty. per Carrier (#) 136
Qty. per Reel (#) 0
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel No
Temp. Range -40 to 85°C
Thickness (mm) 1.2
Width (mm) 13.0

Description

The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.