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3.3V 128K x 36 Synchronous Pipelined Burst SRAM with 2.5V I/O

Package Information

Lead Count (#) 119
Pkg. Code BG119
Pitch (mm) 1.27
Pkg. Type PBGA
Pkg. Dimensions (mm) 14.0 x 22.0 x 2.15

Environmental & Export Classifications

Pb (Lead) Free No
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320040

Product Attributes

Lead Count (#) 119
Pb (Lead) Free No
Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Architecture Synch Burst
Bus Width (bits) 36
Core Voltage (V) 3.3
Density (Kb) 4608
I/O Frequency (MHz) 1 - 1
I/O Voltage (V) 2.5 - 2.5
Length (mm) 14.0
MOQ 168
Organization 128K x 36
Output Type Pipelined
Package Area (mm²) 308.0
Pb Free Category e0
Pitch (mm) 1.27
Pkg. Dimensions (mm) 14.0 x 22.0 x 2.15
Pkg. Type PBGA
Qty. per Carrier (#) 84
Qty. per Reel (#) 0
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel No
Temp. Range 0 to 70°C
Thickness (mm) 2.15
Width (mm) 22.0

Description

The 71V25761 3.3V CMOS synchronous SRAM is organized as 128K x 36 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.