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5.0V 2K x 8 Asynchronous Static RAM

Package Information

Lead Count (#) 24
Pkg. Code CD24
Pitch (mm) 2.54
Pkg. Type CDIP
Pkg. Dimensions (mm) 32.0 x 15.24 x 2.9

Environmental & Export Classifications

Pb (Lead) Free No
Moisture Sensitivity Level (MSL) 1
ECCN (US) 3A001A2C
HTS (US) 8542320041

Product Attributes

Lead Count (#) 24
Pb (Lead) Free No
Carrier Type Tube
Moisture Sensitivity Level (MSL) 1
Access Time (ns) 55
Architecture Asynchronous
Bus Width (bits) 8
Core Voltage (V) 5
Density (Kb) 16
I/O Voltage (V) 5 - 5
Length (mm) 32.0
MOQ 300
Organization 2K x 8
Package Area (mm²) 487.7
Pb Free Category e0
Pitch (mm) 2.54
Pkg. Dimensions (mm) 32.0 x 15.24 x 2.9
Pkg. Type CDIP
Published No
Qty. per Carrier (#) 15
Qty. per Reel (#) 0
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel No
Temp. Range -55 to 125°C
Thickness (mm) 2.9
Width (mm) 15.24

Description

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.