Overview
Description
The RTK226110DE0010BU is an RAA226110 gate drive evaluation board. This evaluation kit consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage. It allows users to easily evaluate the GaN E-HEMT performance in any half-bridge-based topology, either with the universal motherboard (P/N: GS665MB-EVB) or users’ own system design. The RTK226110DE0010BU board provides a 0V turn-off voltage solution. The 0V turn-off solution is normally used in low power applications and is easy to implement, as there is no need for a negative power supply rail.
Features
- Serves as a reference design and evaluation tool as well as a deployment-ready solution for easy in-system evaluation.
- Vertical mount style with a height of 35mm, which fits in the majority of 1U designs and allows for the evaluation of a GaN E-HEMT in a traditional through-hole type power supply board.
- Current shunt position for switching characterization testing.
- Universal form factor and footprint for all products.
- 0V turn-off voltage.
Applications
Documentation
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Design & Development
Software & Tools
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
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