Overview
Description
Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) use an exclusive trench gate configuration in the process structure. These devices provide faster switching performance compared to previous IGBT generations. They also reduce conduction losses by decreasing the saturation voltage.
Our 1800V - 200A/100A IGBTs are optimized for high-power applications such as wind power generation and solar inverters.
Features
- Renesas 8th-generation trench IGBT
- Short circuit withstands time (10µs min.)
- Optimized for high-power application
- Unsawn wafer
- Wafer size = 200mm
- Quality grade: Standard
Comparison
Applications
- Wind power generation
- Solar inverters
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 134 KB | |
| Application Note | PDF 521 KB 日本語 | |
| Application Note | PDF 1.39 MB 日本語 | |
| Application Note | PDF 881 KB 日本語 | |
| Application Note | PDF 712 KB 日本語 | |
| Application Note | PDF 842 KB | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
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