Overview

Description

The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepares 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.

Features

  • Single 3.3 V supply: 3.3 V ± 0.3 V
  • Access time: 10 ns / 12 ns (max)
  • Completely static memory No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL compatible All inputs and outputs
  • Operating current: 145 / 130mA (max)
  • TTL standby current: 40 mA (max)
  • CMOS standby current : 5 mA (max) : 0.8 mA (max) (L-version) : 0.5 mA (max) (S-version)
  • Data retention current : 0.4 mA (max) (L-version) :0.2 mA (max) (S-version)
  • Data retention voltage: 2.0 V (min) (L-version , S-version)
  • Center VCC and VSS type pin out

Documentation

Type
Date
PDF 563 KB 日本語 Datasheet
PDF 471 KB 日本語 Guide
PDF 1.27 MB 日本語 Guide
PDF 202 KB Product Reliability Report
PDF 201 KB Product Reliability Report
PDF 202 KB Product Reliability Report
PDF 202 KB Product Reliability Report
PDF 202 KB Product Reliability Report
PDF 202 KB Product Reliability Report
PDF 1.22 MB 日本語 Product Change Notice
PDF 79 KB Package Outline Drawing
PDF 1.04 MB 日本語 Product Change Notice
PDF 818 KB 日本語 Product Change Notice
PDF 885 KB 日本語 Product Change Notice
PDF 1.26 MB 日本語 Product Change Notice
PDF 22 KB Package Outline Drawing
16 items

Design & Development

Models

Models

Type Date
ZIP 12 KB Model - IBIS
ZIP 12 KB Model - IBIS
2 items

Support