The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.

Features

  • Single 5.0 V supply: 5.0 V ± 10%
  • Access time: 12 ns (max)
  • Completely static memory: No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL compatible: All inputs and outputs
  • Operating current: 160 mA (max)
  • TTL standby current: 40 mA (max)
  • CMOS standby current: 5 mA (max), 1.0 mA (max) (L-version)
  • Data retention current: 0.5 mA (max) (L-version)
  • Data retention voltage: 2 V (min) (L-version)Center Vcc and Vss type pin out

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
R1RP0416DGE-2PR#B1
Active SOJ Tube
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
R1RP0416D Series Datasheet 日本語 Datasheet PDF 538 KB
PCNs & PDNs
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction) 日本語 Product Change Notice PDF 4.86 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001B/E ) 日本語 Product Change Notice PDF 3.74 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001A/E ) 日本語 Product Change Notice PDF 1.46 MB
Other
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB
Package Drawing SOJ 44pin PRSJ0044DA-A Package Outline Drawing PDF 22 KB