Renesas offers the next generation magnetoresistive random-access memory (MRAM) by utilizing a proprietary technology called perpendicular magnetic-tunnel-junction STT (spin-transfer torque) to achieve best-in-class non-volatile memory with long data retention and fast serial and parallel interfaces. With a wide range of memory densities and high operating temperatures, Renesas’ MRAM is suited for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements.

Renesas MRAM product offerings include:

  • High memory density
    • SPI 4Mb to 16Mb
    • Parallel 4Mb to 32Mb
  • Low active write and read currents
  • Configurable interfaces for SPI, DPI, QPI with SDR and DDR modes, and parallel up to 108MHz
  • Low operating power from 1.71V to 3.6V (SPI interface) and 2.7V to 3.6V (parallel interface)
  • Operating temperature from -40 °C to 105 °C

About MRAM Memory

An MRAM is a type of memory that stores data within cells of magnetic elements. Two ferromagnetic plates separated by a thin insulator hold a magnetization. One plate is a permanent magnet set to a particular polarity. The second plate’s magnetization is changed with an external field. During programming, this field can produce a low or high resistance state, respectively representing “0” or “1” in data storage.

Memory & Logic

Product Selection Table

    Processing table
    Part Number
    Density (Kb)
    I/O Voltage (V)
    Interface
    Pkg. Code
    Temp. Range
    I/O Frequency (MHz)
    I/O Type
    M1004204
    Non-Volatile 4Mb High Performance MRAM, 1.8V    		 4096 1.8 QSPI NFT8, PWG8 -40 to 85°C, -40 to 105°C 108, 54 SPI
    M1008204
    Non-Volatile 8Mb High Performance MRAM, 1.8V    		 8192 1.8 QSPI NFT8, PWG8 -40 to 85°C, -40 to 105°C 108, 54 SPI
    M1016204
    Non-Volatile 16Mb High Performance MRAM, 1.8V    		 16384 1.8 QSPI NFT8, PWG8 -40 to 85°C, -40 to 105°C 108, 54 SPI
    M3004204
    Non-Volatile 4Mb High Performance MRAM, 3.0V    		 4096 3 QSPI NFT8, PWG8 -40 to 85°C, -40 to 105°C 108, 54 SPI
    M3004316
    Non-Volatile 4Mb MRAM, Parallel Interface, 35ns and 45ns    		 4096 3 Parallel BCG48, PHG44, PHG54 -40 to 85°C, -40 to 105°C
    M3008204
    Non-Volatile 8Mb High Performance MRAM, 3.0V    		 8192 3 QSPI NFT8, PWG8 -40 to 85°C, -40 to 105°C 108, 54 SPI
    M3008316
    Non-Volatile 8Mb MRAM, Parallel Interface, 35ns and 45ns    		 8192 3 Parallel BCG48, PHG54 -40 to 85°C, -40 to 105°C
    M3016204
    Non-Volatile 16Mb High Performance MRAM, 3.0V    		 16384 3 QSPI NFT8, PWG8 -40 to 85°C, -40 to 105°C 108, 54 SPI
    M3016316
    Non-Volatile 16Mb MRAM, Parallel Interface, 35ns and 45ns    		 16384 3 Parallel BCG48, PHG54 -40 to 85°C, -40 to 105°C
    M3032316
    Non-Volatile 32Mb MRAM, Parallel Interface, 35ns and 45ns    		 32768 3 Parallel BCG48 -40 to 85°C, -40 to 105°C
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    Documentation

    Title Type Date
    One-Renesas Memory Solutions Brochure
    PDF4.49 MB
    Brochure
    MRAM Family Overview
    PDF1.26 MB
    Overview
    High Performance Serial and Parallel MRAM Memory Family

    Renesas’ high performance serial and parallel MRAM memory family provides the largest range of SPI and parallel interface non-volatile memory sizes, with fast read and write speeds. The MRAM family is ideal for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements.

    Video List
    High Performance Serial and Parallel MRAM Memory Family

    News & Blog Posts

    IDT Offers Avalanche Technology’s MRAM Devices to Complement its Broad Range of Semiconductor Devices News Oct 17, 2019