Renesas offers the next generation magnetoresistive random-access memory (MRAM) by utilizing a proprietary technology called perpendicular magnetic-tunnel-junction STT (spin-transfer torque) to achieve best-in-class non-volatile memory with long data retention and fast serial and parallel interfaces. With a wide range of memory densities and high operating temperatures, Renesas’ MRAM is suited for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements.

Renesas MRAM product offerings include:

  • High memory density
    • SPI 4Mb to 16Mb
    • Parallel 4Mb to 32Mb
  • Low active write and read currents
  • Configurable interfaces for SPI, DPI, QPI with SDR and DDR modes, and parallel up to 108MHz
  • Low operating power from 1.71V to 3.6V (SPI interface) and 2.7V to 3.6V (parallel interface)
  • Operating temperature from -40 °C to 105 °C

About MRAM Memory

An MRAM is a type of memory that stores data within cells of magnetic elements. Two ferromagnetic plates separated by a thin insulator hold a magnetization. One plate is a permanent magnet set to a particular polarity. The second plate’s magnetization is changed with an external field. During programming, this field can produce a low or high resistance state, respectively representing “0” or “1” in data storage.

Memory & Logic

Product Selection Table

    Processing table
    Part Number
    Density (Kb)
    I/O Voltage (V)
    Interface
    Pkg. Code
    Temp. Range
    I/O Frequency (MHz)
    I/O Type
    M1004204
    Non-Volatile 4Mb High Performance MRAM, 1.8V    		 4096 1.8 QSPI NFT8, PWG8 -40 to 85°C, -40 to 105°C 108, 54 SPI
    M1008204
    Non-Volatile 8Mb High Performance MRAM, 1.8V    		 8192 1.8 QSPI NFT8, PWG8 -40 to 85°C, -40 to 105°C 108, 54 SPI
    M1016204
    Non-Volatile 16Mb High Performance MRAM, 1.8V    		 16384 1.8 QSPI NFT8, PWG8 -40 to 85°C, -40 to 105°C 108, 54 SPI
    M3004204
    Non-Volatile 4Mb High Performance MRAM, 3.0V    		 4096 3 QSPI NFT8, PWG8 -40 to 85°C, -40 to 105°C 108, 54 SPI
    M3004316
    Non-Volatile 4Mb MRAM, Parallel Interface, 35ns and 45ns    		 4096 3 Parallel BCG48, PHG44, PHG54 -40 to 85°C, -40 to 105°C
    M3008204
    Non-Volatile 8Mb High Performance MRAM, 3.0V    		 8192 3 QSPI NFT8, PWG8 -40 to 85°C, -40 to 105°C 108, 54 SPI
    M3008316
    Non-Volatile 8Mb MRAM, Parallel Interface, 35ns and 45ns    		 8192 3 Parallel BCG48, PHG54 -40 to 85°C, -40 to 105°C
    M3016204
    Non-Volatile 16Mb High Performance MRAM, 3.0V    		 16384 3 QSPI NFT8, PWG8 -40 to 85°C, -40 to 105°C 108, 54 SPI
    M3016316
    Non-Volatile 16Mb MRAM, Parallel Interface, 35ns and 45ns    		 16384 3 Parallel BCG48, PHG54 -40 to 85°C, -40 to 105°C
    M3032316
    Non-Volatile 32Mb MRAM, Parallel Interface, 35ns and 45ns    		 32768 3 Parallel BCG48 -40 to 85°C, -40 to 105°C
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    Documentation

    Title Type Date
    One-Renesas Memory Solutions Brochure
    PDF4.25 MB
    Brochure
    MRAM Family Overview
    PDF1.26 MB
    Overview

    Videos & Training

    High Performance Serial and Parallel MRAM Memory Family

    Renesas’ high performance serial and parallel MRAM memory family provides the largest range of SPI and parallel interface non-volatile memory sizes, with fast read and write speeds. The MRAM family is ideal for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements.

    Video List

    News & Blog Posts

    IDT Offers Avalanche Technology’s MRAM Devices to Complement its Broad Range of Semiconductor Devices News

    Tools & Resources

    Memory Products Forum