The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage, high source/sink current capability and a split driver output stage.

Renesas' radiation hardened portfolio includes low-side GaN FET drivers to drive GaN FETs used in power systems. These drivers contain all the features necessary to reliably drive enhancement mode GaN FETs in space applications.


Title language Type Format File Size Date
Application Notes & White Papers
Taking Advantage of GaN in Small Satellite “New Space” Applications 日本語 White Paper PDF 470 KB
Advantages of Using Gallium NitrideFETs in Satellite Applications White Paper PDF 548 KB
AN9867: End of Life Derating: A Necessity or Overkill Application Note PDF 338 KB
Intersil Space Products Brochure Brochure PDF 3.16 MB
Intersil Commercial Lab Services Brochure PDF 364 KB

printNews & Additional Resources

Type Date Sort ascending
Low Dose Rate Acceptance Testing Page Mar 26, 2020
Standard Data Package Page Mar 20, 2020
Rad Hard SMD Test Flow Page Mar 20, 2020
Rad Hard Test Reports Page Mar 20, 2020