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Renesas' GaN FET Drivers are designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated and non-isolated topologies.
Part Number |
Output Type |
Supply Voltage (V) |
Gate Drive (V) |
ISOURCE (Max) (mA) |
ISINK (Max) (mA) |
Turn-Off Prop Delay (ns) |
Turn-On Prop Delay (ns) |
Lead Count (#) |
Pkg. Type |
---|---|---|---|---|---|---|---|---|---|
Low-Side GAN FET Driver with Programmable Source Current and Adjustable Overcurrent Protection | Low Side | 6.5 - 18 | 5.8 | 2000 | 3000 | 20 | 20 | 16 | QFN |