Overview
Description
The R1RW0408D is a 4-Mbit High-Speed static RAM organized 512-kword × 8-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high density surface mounting.
Features
- Single supply: 3.3 V ± 0.3 V
- Access time: 10 ns /12 ns (max)
- Completely static memory: No clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible: All inputs and outputs
- Operating current: 115mA/ 100mA (max)
- TTL standby current: 40 mA (max)
- CMOS standby current: 5 mA (max), 0.8 mA (max) (L-version)
- Data retention current: 0.4 mA (max) (L-version)
- Data retention voltage: 2 V (min) (L-version)
- Center VCC and VSS type pin out
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 395 KB 日本語 | |
| Guide | PDF 182 KB 日本語 | |
| Guide | PDF 1.27 MB 日本語 | |
| Product Reliability Report | PDF 202 KB | |
| Product Reliability Report | PDF 202 KB | |
| Product Change Notice | PDF 1.04 MB 日本語 | |
| Product Change Notice | PDF 885 KB 日本語 | |
| Package Outline Drawing | PDF 21 KB | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
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