概要
説明
The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
特長
- Very low rDS(ON) 5mΩ (typical)
- Ultra low total gate charge 14nC (typical)
- SEE hardness (see SEE report for details) - SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV•cm2/mg
- ISL70023SEH radiation accepting testing
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s) : 75krad(Si)
- ISL73023SEH radiation accepting testing - Low dose rate (0.01rad(Si)/s) : 75krad(Si)
- Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package: Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
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| 分類 | タイトル | 日時 |
| データシート | PDF 521 KB | |
| レポート | PDF 433 KB | |
| カタログ | PDF 467 KB | |
| 技術概要 | PDF 332 KB | |
| マニュアル－開発ツール | PDF 1.74 MB | |
| アプリケーションノート | PDF 221 KB | |
| レポート | PDF 368 KB | |
| ホワイトペーパー | PDF 1.49 MB English | |
| ホワイトペーパー | PDF 548 KB | |
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設計・開発
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Evaluation
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