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3.3V 256K x 36 Synchronous 3.3V I/O Flow-Through SRAM

パッケージ情報

Lead Count (#) 100
Pkg. Code PKG100
Pitch (mm) 0.65
Pkg. Type TQFP
Pkg. Dimensions (mm) 20.0 x 14.0 x 1.4

環境及び輸出分類情報

Pb (Lead) Free Yes
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320041

製品スペック

Lead Count (#) 100
Pb (Lead) Free Yes
Carrier Type Reel
Moisture Sensitivity Level (MSL) 3
Price (USD) | 1ku 23.00228
Architecture Synch Burst
Bus Width (bits) 36
Core Voltage (V) 3.3
Density (Kb) 9216
I/O Voltage (V) 3.3 - 3.3
Length (mm) 20.0
MOQ 1000
Organization 256K x 36
Output Type Flowthrough
Package Area (mm²) 280.0
Pb Free Category e3 Sn
Pitch (mm) 0.65
Pkg. Dimensions (mm) 20.0 x 14.0 x 1.4
Pkg. Type TQFP
Qty. per Carrier (#) 0
Qty. per Reel (#) 1000
Reel Size (in) 13
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel Yes
Temp. Range -40 to 85°C
Thickness (mm) 1.4
Width (mm) 14.0

説明

The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.