Renesas' insulated gate bipolar transistor (IGBT) product series for power factor correction (PFC) are recommended for 50kHz to 100kHz frequencies. These IGBTs are ideal for universal power supplies (UPS), solar power generation and welding applications.

Generation Series Features
G7H 65T5x series 650V IGBT for partial switching PFC, ultra-low VCE(sat), not guaranteed against short circuits, frequency: 100kHz or higher
G7H 65T4x series 650V IGBT for full switching PFC, ultra-high-speed switching, not guaranteed against short circuits, frequency: 20kHz or higher
G6H 60Fx Series This series is not supported for new designs. Please use the 65T4x Series of products instead.
600V IGBT, low VCE(sat), not guaranteed against short circuits, frequency: 10kHz to 35kHz
G6H 60Dx Series This series is not supported for new designs. Please use the 65T4x Series of products instead.
600V IGBT, low VCE(sat), tsc ≥3µs, frequency: 10kHz to 20kHz

Product Features

Main Use (Proportion) Circuit Type (Proportion) Package Load Short Circuit Current Rating Characteristics Diode Product Series
Standard model Partial switching
*Other: 5%
TO-3PF Unnecessary 25A to 30A Ultra-low frequency >100Hz Unnecessary G7H T5 Series
30A:
RJP65T54DPM
Mid-to-high models Full switching
*Other: 4%
TO-247 Unnecessary 20A to 45A Ultra-high-speed turn-off Unnecessary G7H T4 Series
20A:
RJP65T43DPM
40A:
RJH65T46DPQ
45A:
RJH65T47DPQ

IGBTs for Power Factor Correction

IGBTs for Partial Switching PFC

Features

  • Low loss VCE(sat) = 1.35V (typ.)
  • Isolated full-mold package: TO-3PF
  • High current tolerant: Icp = 200A
PFC IGBT for Airconditioner Unit Diagram

Competitive Comparison - Partial Switching PFC

Part Number VCES
(V)
VGES
(V)
IC (A) IC(peak) VCE(sat)
(V)
Tj max
(C)
Package
25 °C 100 °C (A)
RJP65T54DPM 650 ±30 60 30 200 1.35
(30A)
175 TO-3PF
(isolated)
RJP65T14DPQ-A0 650 ±30 100 50 120 1.4
(30A)
175 TO-247
(non-isolated)
Competitor's IGBT 600 ±20 80 40 100 1.5
(30A)
175 TO-247
(non-isolated)

Power Factor Correction IGBT Features

IGBTs for Full Switching PFC

Features

  • VCES = 650V
  • Low noise and high-speed switching
  • Isolated full-mold package: TO-3PF - For low output
  • Non-isolated package: TO-247 - For high output

Power Factor Correction IGBT for Full Switching

Competitive Comparison - Full Switching PFC

  Part Number VCES
(V)
VGES
(V)
IC (A) VCE(sat)
(V)
Tj max
(°C)
Package
25 °C 100 °C
RJP65T43DPM 650 ±30 40 20 1.8
(20A)
175 TO-3PFM
(isolated)
RJH65T46DPQ-A0 650 ±30 80 40 1.8
(40A)
175 TO-247
(non-isolated)
RJH65T47DPQ-A0 650 ±30 90 45 1.8
(45A)
175 TO-247
(non-isolated)
Company B 650 ±20 80 40 1.9
(40A)
175 TO-3PN
(non-isolated)

To inquire about sample availability, contact a Renesas sales office or sales representative.

Application Performance Comparison - IGBTs for Full Switching PFC

IGBT Full Switching PFC - Application Performance

Documentation & Downloads

Title Other Languages Type Format File Size Date
Application Notes & White Papers
TO-247plus Package Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Other
Discrete & Power Devices Brochure Brochure PDF 3.72 MB
Motor Solutions Catalog 日本語, 简体中文 Brochure PDF 2.69 MB
Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog Brochure PDF 7.66 MB