Evaluation Board for F1978, 6-bit, 75 Ohm, Digital Step Attenuator
The F1978EVBI is a fully populated evaluation board which allows the customer to easily evaluate the device. Attenuation may be set using either the parallel control...
6-bit 0.5dB, 75 ohm, Glitch-Free™ Digital Step Attenuator
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Overview
Description
The IDT F1978 Digital Step Attenuator (DSA) featuring Glitch-Free™ technology improves system reliability and settling time. It has an attenuation range of 31.5dB with excellent accuracy and very low distortion and insertion loss. The product supports new Direct serial mode programming as well as Conventional serial programming and Parallel programming modes of Direct and Latched.
The F1978 DSA has identical RF performance as the F1975 DSA. The difference between F1978 and F1975 is that F1978 has an additional programming mode called Direct Serial Programming. Consult the "Programming" section of the F1978 datasheet or application note AN-945 “Comparison of F1975 and F1978 Digital Step Attenuator Serial Programming Methods”.
Features
- 5MHz to 3000MHz frequency range
- Glitch-Free™ low transient overshoot
- Low insertion loss 1.2dB at 1GHz
- Excellent linearity +64dBm IIP3
- Attenuation step error 0.1dB at 1GHz
- Serial and parallel interface 31.5dB range
- Low spurious design
- 3V / 5V supply, 1.8V / 3.3V control logic
- Fast settling time
- Class 2 JEDEC ESD (2kV HBM)
- 4 x 4 mm 20-TQFN package
Documentation
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Date | |
|---|---|---|
| PDF 3.77 MB | Datasheet | |
| PDF 2.24 MB | Guide | |
| PDF 2.83 MB | Guide | |
| PDF 517 KB | Report | |
| PDF 1.07 MB | Product Brief | |
| PDF 193 KB | Application Note | |
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ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| VFQFPN | 20 | K | Yes | Tray | Get Samples, | |
| VFQFPN | 20 | K | Yes | Reel |
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Support
Renesas Samples
Select an orderable part number:
| Orderable Part ID | Sample |
|---|---|
| F1978NCGK | Availability |
play_circle_filledVideos & Training
IDT RF Product Benefits Overview
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
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News & Blog Posts
| New IDT Family of RF Devices Targets Broadband and CATV Markets | News | Mar 2, 2016 |
