Package Information
| Pkg. Type | TO-247 |
Environmental & Export Classifications
| Pb (Lead) Free | |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | |
| HTS (US) |
Product Attributes
| Pkg. Type | TO-247 |
| Carrier Type | Tape & Reel |
| Mounting Type | Surface Mount |
| Temp. Range | -55 to +150°C |
| Price (USD) | 1ku | 4.7 |
| Ciss (Typical) (pF) | 1500 |
| Coss (Typical) (pF) | 127 |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 55.7 |
| Qg typ (nC) | 24.5 |
| Qoss (nC) | 135 |
| Qrr typ (nC) | 0 |
| Qualification Level | Standard |
| Quality Level | Standard |
| RDSON (Typ) (mΩ) | 30 |
| RDSON (max) (mΩ) | 41 |
| Ron * Qoss (FOM) | 4050 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 650 |
| Vth typ (V) | 4 |
| trr (Typical) (nS) | 36 |
Description
The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a high-voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and enhanced reliability.